







MINI SIM HINGED, 6P, SMT, 2.6MM
BLADE HEX SOCKET 4MM 4.72"
RF FET LDMOS 65V 20DB SOT502A
SNAP-ACTION SWITCHING ELEMENT SA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 晶体管型: | LDMOS |
| 频率: | 1.03GHz ~ 1.09GHz |
| 获得: | 20dB |
| 电压测试: | 28 V |
| 额定电流(安培): | 49A |
| 噪声系数: | - |
| 电流测试: | 100 mA |
| 功率输出: | 200W |
| 额定电压: | 65 V |
| 包/箱: | SOT-502A |
| 供应商设备包: | LDMOST |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
NE3514S02-ACEL (California Eastern Laboratories) |
HJ-FET NCH 10DB S02 |
|
|
MRF6S19100HSR3NXP Semiconductors |
FET RF 68V 1.99GHZ NI-780S |
|
|
BLF1822-10,112Ampleon |
RF FET LDMOS 65V 13.5DB SOT467C |
|
|
BLF6G22L-40BN,112Ampleon |
RF FET LDMOS 65V 19DB SOT1112A |
|
|
MRF6VP3450HSR6NXP Semiconductors |
FET RF 2CH 110V 860MHZ NI1230S |
|
|
BLF7G20LS-250P,112Ampleon |
RF FET LDMOS 65V 18DB SOT539B |
|
|
BLF7G22L-160,118Ampleon |
RF FET LDMOS 65V 18DB SOT502A |
|
|
BLF7G27L-75P,112Ampleon |
RF FET LDMOS 65V 17DB SOT1121A |
|
|
NE6510179A-ACEL (California Eastern Laboratories) |
FET RF 8V 1.9GHZ 79A |
|
|
MRF9060LR1NXP Semiconductors |
FET RF 65V 945MHZ NI-360 |
|
|
BLP7G07S-140PYAmpleon |
RF FET LDMOS 65V 20.9DB SOT12231 |
|
|
ATF-36163-BLKGBroadcom |
FET RF 3V 4GHZ SOT-363 |
|
|
PTFA212001F1V4R250XTMA1IR (Infineon Technologies) |
IC RF POWER TRANSISTOR |