类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IMW120R060M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 36A TO247-3 |
|
IPW60R280C6Rochester Electronics |
MOSFET N-CH 600V 13.8A TO247-3 |
|
SPB02N60C3ATMA1Rochester Electronics |
MOSFET N-CH 650V 1.8A TO263-3 |
|
IPP60R360CFD7XKSA1IR (Infineon Technologies) |
MOSFET 600V TO220-3-1 |
|
SIJ186DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 23A/79.4A PPAK |
|
IXTP80N12T2Wickmann / Littelfuse |
MOSFET N-CH 120V 80A TO220AB |
|
IMZA65R072M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
NTLUF4189NZTBGRochester Electronics |
MOSFET N-CH 30V 1.2A 6UDFN |
|
IPA075N15N3GRochester Electronics |
IPA075N15 - 12V-300V N-CHANNEL P |
|
DMG3404L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4.2A SOT23 |
|
FQI2N90TURochester Electronics |
MOSFET N-CH 900V 2.2A I2PAK |
|
NTP85N03Rochester Electronics |
MOSFET N-CH 28V 85A TO220AB |
|
SPI21N50C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 560V 21A TO262-3 |