English
简体中文
XTAL OSC XO 10.0000MHZ LVPECL
MEMS OSC XO 8.1920MHZ H/LV-CMOS
MOSFET N-CH 30V 80A D2PAK
IC REG BUCK 5V 2A 8DFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.4mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 51 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5300 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 94W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIR836DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 21A PPAK SO-8 |
|
FDS8878Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.2A 8SOIC |
|
CSD17579Q5ATexas Instruments |
MOSFET N-CH 30V 25A 8VSON |
|
BUK7M5R0-40HXNexperia |
MOSFET N-CH 40V 85A LFPAK33 |
|
SQS484EN-T1_BE3Vishay / Siliconix |
MOSFET N-CH 40V 16A 1212-8 |
|
IMBF170R1K0M1XTMA1IR (Infineon Technologies) |
SICFET N-CH 1700V 5.2A TO263-7 |
|
AUIRFZ44VRochester Electronics |
MOSFET N-CH 60V 55A TO220AB |
|
IRFUC20PBFVishay / Siliconix |
MOSFET N-CH 600V 2A TO251AA |
|
IRL8114PBFRochester Electronics |
MOSFET N-CH 30V 90A TO220AB |
|
SIHG21N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO247AC |
|
STP16N65M5STMicroelectronics |
MOSFET N-CH 650V 12A TO220-3 |
|
NTD4969NT4GRochester Electronics |
MOSFET N-CH 30V 9.4A/41A DPAK |
|
NTP6410ANGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 76A TO220AB |