RES SMD 1.78K OHM 1% 1/16W 0603
HEATSINK 40X40X6MM XCUT T412
MOSFET N-CH 30V 90A TO220AB
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 90A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 4.5mOhm @ 40A, 10V |
vgs(th) (最大值) @ id: | 2.25V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 29 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2660 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 115W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIHG21N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO247AC |
|
STP16N65M5STMicroelectronics |
MOSFET N-CH 650V 12A TO220-3 |
|
NTD4969NT4GRochester Electronics |
MOSFET N-CH 30V 9.4A/41A DPAK |
|
NTP6410ANGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 76A TO220AB |
|
STP55NF06LSTMicroelectronics |
MOSFET N-CH 60V 55A TO220AB |
|
SIHD14N60E-BE3Vishay / Siliconix |
MOSFET N-CH 600V 13A TO252AA |
|
STW21N65M5STMicroelectronics |
MOSFET N-CH 650V 17A TO247-3 |
|
RM120N85T2Rectron USA |
MOSFET N-CH 85V 120A TO220-3 |
|
SCT2750NYTBROHM Semiconductor |
SICFET N-CH 1700V 5.9A TO268 |
|
DMN2040UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.7A TSOT26 T&R |
|
CSD23203WTTexas Instruments |
MOSFET P-CH 8V 3A 6DSBGA |
|
IPD135N03LGBTMA1IR (Infineon Technologies) |
LV POWER MOS |
|
IPI50N10S3L16AKSA1Rochester Electronics |
MOSFET N-CH 100V 50A TO262-3 |