English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 85 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.3mOhm @ 60A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5500 pF @ 40 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 160W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SCT2750NYTBROHM Semiconductor |
SICFET N-CH 1700V 5.9A TO268 |
|
DMN2040UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.7A TSOT26 T&R |
|
CSD23203WTTexas Instruments |
MOSFET P-CH 8V 3A 6DSBGA |
|
IPD135N03LGBTMA1IR (Infineon Technologies) |
LV POWER MOS |
|
IPI50N10S3L16AKSA1Rochester Electronics |
MOSFET N-CH 100V 50A TO262-3 |
|
SI7892BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 15A PPAK SO-8 |
|
IPA60R600P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6A TO220 |
|
SPP80P06PHXKSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 80A TO220-3 |
|
SPA06N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6.2A TO220-FP |
|
IXTP18P10TWickmann / Littelfuse |
MOSFET P-CH 100V 18A TO220AB |
|
TPH1R306PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 100A 8SOP |
|
HUF76645P3Rochester Electronics |
MOSFET N-CH 100V 75A TO220-3 |
|
SI2301A-TPMicro Commercial Components (MCC) |
MOSFET P-CH 20V 2.8A SOT23 |
