MOSFET N-CH 60V 6.5A 8SOP
PVC INS RING TERM 8WG 50 BAG
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 6.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4V, 10V |
rds on (max) @ id, vgs: | 37mOhm @ 6.5A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 16 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 900 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 2W (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOP |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMSD2P102LR2GRochester Electronics |
MOSFET P-CH 20V 2.3A 8SOIC |
|
TPIC5302DRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF3205LPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 110A TO262 |
|
BUK952R8-60E,127Rochester Electronics |
MOSFET N-CH 60V 120A TO220AB |
|
TSM045NA03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 108A 8PDFN |
|
APT30M36JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 300V 76A ISOTOP |
|
STW5NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 3.5A TO247-3 |
|
SI7421DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 6.4A PPAK 1212-8 |
|
IAUC100N04S6L014ATMA1IR (Infineon Technologies) |
IAUC100N04S6L014ATMA1 |
|
IRF840BPBFVishay / Siliconix |
MOSFET N-CH 500V 8.7A TO220AB |
|
IPD075N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO252-3 |
|
MCH3478-S-TL-HRochester Electronics |
MOSFET N-CH 1.8V 3MCPH |
|
TSM038N04LCP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 40V 135A TO252 |