MOSFET N-CH 60V 30A TO220AB
POWER SUPPLY PROGRAMED DC 2.6 KW
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 50mOhm @ 18A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 46 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1200 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 88W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTA4015NT1GRochester Electronics |
MOSFET N-CH 20V 238MA SC75 |
|
FDWS9510L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 50A 8DFN |
|
TPH3208LDGTransphorm |
GANFET N-CH 650V 20A 3PQFN |
|
BUK7516-55A,127Rochester Electronics |
PFET, 65.7A I(D), 55V, 0.016OHM, |
|
DMN53D0LW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 360MA SOT323 |
|
FDB2552-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N CH 150V 5A TO-263AB |
|
SIR626ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 40.4A/165A PPAK |
|
DMN24H11DS-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 270MA SOT23 T&R |
|
RQ3E100MNTB1ROHM Semiconductor |
MOSFET N-CH 30V 10A HSMT8 |
|
FDP2D3N10CRochester Electronics |
MOSFET N-CH 100V 222A TO220-3 |
|
SI4103DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 14A/16A 8SO |
|
FDB8880-ONRochester Electronics |
11A, 30V, 0.0145OHM, N-CHANNEL, |
|
2SK2738-ERochester Electronics |
N-CHANNEL POWER MOSFET |