







MOSFET P-CH 12V 3.9A 4WLCSP
IC FLASH 256MBIT PARALLEL 56TSOP
RF ATTENUATOR 14DB 50OHM SMA
FERRITE CORE TOROID 8.7UH N30
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.9A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 65mOhm @ 3A, 4.5V |
| vgs(th) (最大值) @ id: | 900mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 415 pF @ 6 V |
| 场效应管特征: | - |
| 功耗(最大值): | 400mW (Ta), 12.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 4-WLCSP (0.78x0.78) |
| 包/箱: | 4-XFBGA, WLCSP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
STL13N60M6STMicroelectronics |
MOSFET N-CH 600V 7A POWERFLAT HV |
|
|
2SJ652Rochester Electronics |
POWER MOSFET MOTOR DRIVERS |
|
|
FDP5N50Rochester Electronics |
MOSFET N-CH 500V 5A TO220-3 |
|
|
FDB035AN06A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A/80A D2PAK |
|
|
IRL60SL216IR (Infineon Technologies) |
MOSFET N-CH 60V 195A TO262-3 |
|
|
SI7336ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 30A PPAK SO-8 |
|
|
NTMFS4C302NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 41A/230A 5DFN |
|
|
RQ5C060BCTCLROHM Semiconductor |
MOSFET P-CHANNEL 20V 6A TSMT3 |
|
|
STF20N90K5STMicroelectronics |
MOSFET N-CH 900V 20A TO220FP |
|
|
CSD19536KCSTexas Instruments |
MOSFET N-CH 100V 150A TO220-3 |
|
|
2N6763Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, N |
|
|
APT37M100LRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 37A TO264 |
|
|
DMP1009UFDFQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 11A 6UDFN |