English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 23A (Ta), 90A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4.1mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.35V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 31 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2380 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.6W (Ta), 54W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PQFN (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK2529-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPAW60R600P7SE8228XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6A TO220 |
|
IPB80N06S2H5ATMA1Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
|
IRLR024TRVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
CSD18537NQ5ATTexas Instruments |
MOSFET N-CH 60V 50A 8VSON |
|
FDA20N50-F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 22A TO3PN |
|
NP110N04PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 110A TO263-3 |
|
IXTN210P10TWickmann / Littelfuse |
MOSFET P-CH 100V 210A SOT227B |
|
DMP1022UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 9.5A 6UDFN |
|
SUM50020E-GE3Vishay / Siliconix |
MOSFET N-CH 60V 120A TO263 |
|
STI6N80K5STMicroelectronics |
MOSFET N-CH 800V 4.5A I2PAK |
|
IRF1404ZSPBFRochester Electronics |
MOSFET N-CH 40V 180A D2PAK |
|
IPP320N20N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 34A TO220-3 |
