English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 8™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 24A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 680mOhm @ 12A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 260 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 8370 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1040W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264 [L] |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMFS4H02NFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 37A/193A 5DFN |
|
IRFU3410PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 31A IPAK |
|
ZXMN2A02N8TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 8.3A 8SO |
|
IRFB4410PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 88A TO220AB |
|
BSC067N06LS3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQB7P20TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 7.3A D2PAK |
|
IRFW840BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN1R5-40YSDXNexperia |
MOSFET N-CH 40V 240A LFPAK56 |
|
DMP2066LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 6.5A 8SOP |
|
NCV8440ASTT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 59V 2.6A SOT223 |
|
FDD6N50TM-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 6A DPAK |
|
UPA2521T1H-T2-ATRochester Electronics |
MOSFET N-CH 30V 8A 8VSOF |
|
STF7N65M2STMicroelectronics |
MOSFET N-CH 650V 5A TO220FP |
