English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6.5mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 250 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 13000 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 90W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | ATPAK |
| 包/箱: | ATPAK (2 leads+tab) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDN340PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2A SUPERSOT3 |
|
NTMFS08N003CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 22A/147A POWER56 |
|
BSZ042N04NSGATMA1Rochester Electronics |
MOSFET N-CH 40V 40A TSDSON-8 |
|
SIB452DK-T1-GE3Vishay / Siliconix |
MOSFET N-CH 190V 1.5A PPAK SC75 |
|
IPP80R1K4P7Rochester Electronics |
IPP80R1K4 - 800V COOLMOS N-CHANN |
|
AUIRFR3504ZTRLRochester Electronics |
MOSFET N-CH 40V 42A DPAK |
|
RQ6A050ZPTRROHM Semiconductor |
MOSFET P-CH 12V 5A TSMT6 |
|
STF9N80K5STMicroelectronics |
MOSFET N-CH 800V 7A TO220FP |
|
SI4455DY-T1-E3Vishay / Siliconix |
MOSFET P-CH 150V 2.8A 8SO |
|
TSM150P04LCS RLGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 40V 22A 8SOP |
|
3LP01M-TL-ERochester Electronics |
MOSFET P-CH 30V 100MA 3MCP |
|
BSC123N10LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 10.6/71A 8TDSON |
|
STB20N95K5STMicroelectronics |
MOSFET N-CH 950V 17.5A D2PAK |
