English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™, PolarHV™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 52A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 120mOhm @ 26A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 113 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 6800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 960W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-268 |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RYE002N05TCLROHM Semiconductor |
MOSFET N-CH 50V 200MA EMT3 |
|
IRF8707GTRPBFRochester Electronics |
IRF8707 - HEXFET POWERN-CHANNEL |
|
FDMS86540Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A/50A 8PQFN |
|
SCT10N120AGSTMicroelectronics |
SICFET N-CH 1200V 12A HIP247 |
|
SIDR680DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 32.8A/100A PPAK |
|
FCB36N60NTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 36A D2PAK |
|
CPC3708ZTRWickmann / Littelfuse |
MOSFET N-CH 350V 5MA SOT223 |
|
DMN31D5L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 500MA SOT23 T&R |
|
SIR464DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
|
TK6A80E,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 6A TO220SIS |
|
SISS72DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 7A/25.5A PPAK |
|
IRFI4321PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 34A TO220AB FP |
|
ZXMN2A01FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1.9A SOT23-3 |
