English
简体中文
MOSFET N-CH 20V 2.5A SOT23-3
8GB MLC SD CARD I-TEMP (-40C - +
8-BIT I/O PORT
IC FLASH 1GBIT SPI/QUAD 24BGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 50mOhm @ 2.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.2V @ 11µA |
| 栅极电荷 (qg) (max) @ vgs: | 3.2 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 419 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TPH3207WSTransphorm |
GANFET N-CH 650V 50A TO247-3 |
|
NTHD4N02FT1Rochester Electronics |
MOSFET N-CH 20V 2.9A CHIPFET |
|
FQPF5N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.5A TO220F |
|
RSJ650N10TLROHM Semiconductor |
MOSFET N-CH 100V 65A LPTS |
|
IXFH230N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 230A TO247AD |
|
IRF3805S-7PPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 160A D2PAK |
|
IPS060N03LGAKMA1Rochester Electronics |
MOSFET N-CH 30V 50A TO251-3 |
|
IRL620SPBFVishay / Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
|
DMG2302UK-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2.8A SOT23 |
|
BUK9535-100A,127Rochester Electronics |
MOSFET N-CH 100V 41A TO220AB |
|
PMPB8XNXNexperia |
MOSFET N-CH 20V 10.1A 6DFN |
|
FQT4N20TFRochester Electronics |
MOSFET N-CH 200V 850MA SOT223-4 |
|
NDD03N60ZT4GRochester Electronics |
MOSFET N-CH 600V 2.6A DPAK |