类型 | 描述 |
---|---|
系列: | EF |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 19A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 182mOhm @ 11A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 96 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1423 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 179W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D²PAK (TO-263) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSC882N03LSGATMA1Rochester Electronics |
MOSFET N-CH 34V TDSON-8-1 |
|
QS5U16TRROHM Semiconductor |
MOSFET N-CH 30V 2A TSMT5 |
|
BUK652R3-40C,127Rochester Electronics |
MOSFET N-CH 40V 120A TO220AB |
|
BUK9Y43-60E,115Nexperia |
MOSFET N-CH 60V 22A LFPAK56 |
|
NTD80N02-1GRochester Electronics |
MOSFET N-CH 24V 80A IPAK |
|
SPP15P10PLHXKSA1IR (Infineon Technologies) |
MOSFET P-CH 100V 15A TO220-3 |
|
PMBF170,215Nexperia |
MOSFET N-CH 60V 300MA TO236AB |
|
SSR4N60BTFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RTQ020N05TRROHM Semiconductor |
MOSFET N-CH 45V 2A TSMT6 |
|
PSMN3R5-40YSDXNexperia |
MOSFET N-CH 40V 120A LFPAK56 |
|
IRFSL7434PBFRochester Electronics |
MOSFET N-CH 40V 195A TO262 |
|
IRF341Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPS65R1K4C6AKMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3.2A TO251-3 |