类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 5A (Ta), 17A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 34mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 2.7V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 870 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 2.1W (Ta), 23.5W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3F |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NX3008PBKVLNexperia |
MOSFET P-CH 30V 230MA TO236AB |
|
DMN2550UFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 600MA 3DFN |
|
STL11N4LLF5STMicroelectronics |
MOSFET N-CH 40V 11A POWERFLAT |
|
IP165R660CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRF2907ZS-7PRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
FDD6530ARochester Electronics |
MOSFET N-CH 20V 21A TO252 |
|
PMPB10XNEAXNexperia |
MOSFET N-CH 20V 9A DFN2020MD-6 |
|
SQD40131EL_GE3Vishay / Siliconix |
MOSFET P-CH 40V 50A TO252AA |
|
FDD6770ARochester Electronics |
24A, 25V, 0.004OHM, N-CHANNEL , |
|
RM150N60T2Rectron USA |
MOSFET N-CH 60V 150A TO220-3 |
|
MCH3481-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 2A SC70FL/MCPH3 |
|
FDMS7556SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 35A/49A 8PQFN |
|
STF7NM60NSTMicroelectronics |
MOSFET N-CH 600V 5A TO220FP |