English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 14mOhm @ 9A, 4.5V |
| vgs(th) (最大值) @ id: | 0.9V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 34 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 2.175 nF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.7W (Ta), 12.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN2020MD-6 |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQD40131EL_GE3Vishay / Siliconix |
MOSFET P-CH 40V 50A TO252AA |
|
FDD6770ARochester Electronics |
24A, 25V, 0.004OHM, N-CHANNEL , |
|
RM150N60T2Rectron USA |
MOSFET N-CH 60V 150A TO220-3 |
|
MCH3481-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 2A SC70FL/MCPH3 |
|
FDMS7556SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 35A/49A 8PQFN |
|
STF7NM60NSTMicroelectronics |
MOSFET N-CH 600V 5A TO220FP |
|
MCAC50N10Y-TPMicro Commercial Components (MCC) |
MOSFET N-CH 100V 50A DFN5060 |
|
IXFP18N60XWickmann / Littelfuse |
MOSFET N-CH 600V 18A TO220AB |
|
DMG4413LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 10.5A 8SOP |
|
IPA60R380P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO220-FP |
|
IRFS7530TRL7PPIR (Infineon Technologies) |
MOSFET N CH 60V 240A D2PAK |
|
FDMC86320Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 10.7A/22A 8MLP |
|
FDMS7670ASSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 22A/42A 8PQFN |
