English
简体中文
TRIMMER 1M OHM 0.25W GW SIDE ADJ
MOSFET N-CH 650V 20A TO220FP
BOX ABS ALMOND 3.6"L X 2.25"W
CAT5E JACK KCONN BLUE (DARK)
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ M2 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 180mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 1440 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 30W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220FP |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB80R290C3AATMA2Rochester Electronics |
IPB80R290 - OPTLMOS N-CHANNEL |
|
FCPF11N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 11A TO220F |
|
MCU30N02-TPMicro Commercial Components (MCC) |
MOSFET N-CH 20V 30A DPAK |
|
FDS4672ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 11A 8SOIC |
|
IPP60R950C6XKSA1Rochester Electronics |
MOSFET N-CH 600V 4.4A TO220-3 |
|
IRFS7762TRLPBFRochester Electronics |
MOSFET N-CH 75V 85A D2PAK |
|
TK7P65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 6.8A DPAK |
|
FCPF7N60NTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.8A TO220F |
|
RQ3E180AJTBROHM Semiconductor |
MOSFET N-CH 30V 18A/30A 8HSMT |
|
NP80N055PDG-E1B-AYRochester Electronics |
MOSFET N-CH 55V 80A TO263 |
|
SQS481ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 150V 4.7A PPAK1212-8 |
|
IXTK150N15PWickmann / Littelfuse |
MOSFET N-CH 150V 150A TO264 |
|
IRFL4105PBFRochester Electronics |
MOSFET N-CH 55V 3.7A SOT223 |