类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 25 V |
电流 - 连续漏极 (id) @ 25°c: | 460mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.7V, 4.5V |
rds on (max) @ id, vgs: | 1.1Ohm @ 500mA, 4.5V |
vgs(th) (最大值) @ id: | 1.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 1.5 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 63 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 350mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK9607-30B,118Rochester Electronics |
PFET, 108A I(D), 30V, 0.007OHM, |
|
DMT3002LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 100A PWRDI5060-8 |
|
FDD3670Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 34A TO252 |
|
FDMC8327LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 12A/14A 8MLP |
|
IRF5802TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 900MA MICRO6 |
|
FDPF51N25RDTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 51A TO220F |
|
DMP2109UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3.7A TSOT26 |
|
NVR4501NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.2A SOT23-3 |
|
BSC010N04LSCATMA1IR (Infineon Technologies) |
DIFFERENTIATED MOSFETS |
|
CSD25481F4Texas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR |
|
IRFD310Rochester Electronics |
0.4A 400V 3.600 OHM N-CHANNEL |
|
SFT1341-WRochester Electronics |
SFT1341-W |
|
IXFN44N80PWickmann / Littelfuse |
MOSFET N-CH 800V 39A SOT-227B |