RES ARRAY 4 RES 1K OHM 0804
MOSFET N-CH 40V 90A TO263
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 90A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.95mOhm @ 45A, 5V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 102 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 5850 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1.8W (Ta), 147W (Tc) |
工作温度: | 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-263 |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMT3009LFVW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 12A PWRDI3333 |
|
RND030N20TLROHM Semiconductor |
MOSFET N-CH 200V 3A CPT3 |
|
IPI65R190CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO262-3 |
|
SISA66DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK1212-8 |
|
RF4E060AJTCRROHM Semiconductor |
MOSFET N-CH 30V 6A HUML2020L8 |
|
NP90N03VUG-E1-AYRochester Electronics |
MOSFET N-CH 30V 90A TO252 |
|
DMN3150L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 28V 3.8A SOT23-3 |
|
SPB07N60C3Rochester Electronics |
SPB07N60 - 600V COOLMOS N-CHANNE |
|
SI1031X-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 155MA SC75A |
|
SQ4850EY-T1_BE3Vishay / Siliconix |
MOSFET N-CH 60V 12A 8SOIC |
|
NVMFS5C450NLWFT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
SSM3K333R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 6A 2-3Z1A |
|
FDMS86255ET150Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 10A/63A POWER56 |