类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 70A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 6.5mOhm @ 70A, 10V |
vgs(th) (最大值) @ id: | 4V @ 26µA |
栅极电荷 (qg) (max) @ vgs: | 32 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2.55 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 58W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO262-3 |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI7463DP-T1-E3Vishay / Siliconix |
MOSFET P-CH 40V 11A PPAK SO-8 |
|
PMZ290UN315Rochester Electronics |
SMALL SIGNAL FET |
|
AOD458Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 250V 14A TO252 |
|
DMN24H3D5L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 480MA SOT23 |
|
IRFHS8342TR2PBFRochester Electronics |
MOSFET N-CH 30V 8.8A/19A TSDSON |
|
FDB8030LRochester Electronics |
80A, 30V, 0.0035OHM, N-CHANNEL, |
|
PSMN005-75B,118Nexperia |
MOSFET N-CH 75V 75A D2PAK |
|
2SK3746Rochester Electronics |
MOSFET N-CH 1500V 2A TO3PB |
|
R8005ANXROHM Semiconductor |
MOSFET N-CH 800V 5A TO220FM |
|
FDD8444Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 145A TO252AA |
|
FDMS86569-F085Rochester Electronics |
MOSFET N-CH 60V 65A POWER56 |
|
STF13NM60NSTMicroelectronics |
MOSFET N-CH 600V 11A TO220FP |
|
DMG4496SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 10A 8SOP |