English
简体中文
CAP CER 6800PF 100V X7R 1206
CAP CER 1500PF 16V C0G/NP0 1206
SWITCH ROTARY DIP SP4T 150MA 24V
MOSFET N-CH 30V 8.8A/19A TSDSON
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.8A (Ta), 19A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 16mOhm @ 8.5A, 10V |
| vgs(th) (最大值) @ id: | 2.35V @ 25µA |
| 栅极电荷 (qg) (max) @ vgs: | 8.7 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TSDSON-6 |
| 包/箱: | 6-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDB8030LRochester Electronics |
80A, 30V, 0.0035OHM, N-CHANNEL, |
|
PSMN005-75B,118Nexperia |
MOSFET N-CH 75V 75A D2PAK |
|
2SK3746Rochester Electronics |
MOSFET N-CH 1500V 2A TO3PB |
|
R8005ANXROHM Semiconductor |
MOSFET N-CH 800V 5A TO220FM |
|
FDD8444Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 145A TO252AA |
|
FDMS86569-F085Rochester Electronics |
MOSFET N-CH 60V 65A POWER56 |
|
STF13NM60NSTMicroelectronics |
MOSFET N-CH 600V 11A TO220FP |
|
DMG4496SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 10A 8SOP |
|
NTMYS011N04CTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 13A/35A 4LFPAK |
|
IPP60R520E6XKSA1Rochester Electronics |
MOSFET N-CH 600V 8.1A TO220-3 |
|
BTS282ZAKSA1Rochester Electronics |
MOSFET N-CH 49V 80A TO220-7 |
|
SI3458BDV-T1-BE3Vishay / Siliconix |
MOSFET N-CH 60V 3.2A/4.1A 6TSOP |
|
IRFI820GVishay / Siliconix |
MOSFET N-CH 500V 2.1A TO220-3 |