English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiC (Silicon Carbide Junction Transistor) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 58A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 20V |
| rds on (max) @ id, vgs: | 56mOhm @ 35A, 20V |
| vgs(th) (最大值) @ id: | 4.3V @ 10mA |
| 栅极电荷 (qg) (max) @ vgs: | 106 nC @ 20 V |
| vgs (最大值): | +25V, -15V |
| 输入电容 (ciss) (max) @ vds: | 1762 pF @ 800 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 319W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-4 |
| 包/箱: | TO-247-4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD65R1K5CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 5.2A TO252-3 |
|
STF7NM80STMicroelectronics |
MOSFET N-CH 800V 6.5A TO220FP |
|
NTMFS4936NCT1GRochester Electronics |
11.6A, 30V, 0.0048OHM, N-CHANNE |
|
IPI90R1K0C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRFR5505TRLRochester Electronics |
MOSFET P-CH 55V 18A DPAK |
|
IPA60R650CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7A TO220-FP |
|
IPD053N08N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 90A TO252-3 |
|
R5016ANJTLROHM Semiconductor |
MOSFET N-CH 500V 16A LPTS |
|
AON6796Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 32A/70A 8DFN |
|
IPB048N15N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 120A TO263-3 |
|
SI1403BDL-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 1.5A SC70-6 |
|
NVTR4502PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 1.13A SOT23-3 |
|
DMT10H025SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 41.2A TO252 T&R |
