English
简体中文
RES 698K OHM 0.5% 1/4W 1206
MOSFET N-CH 100V 4A/16A 8MLP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Ta), 16A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 56mOhm @ 4A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 402 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 31W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-MLP (3.3x3.3) |
| 包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ZVP2106ASTZZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 280MA E-LINE |
|
CSD13306WTTexas Instruments |
MOSFET N-CH 12V 3.5A 6DSBGA |
|
RCX220N25ROHM Semiconductor |
MOSFET N-CH 250V 22A TO220FM |
|
HAT2199R-EL-ERochester Electronics |
MOSFET N-CH 30V 11A 8SOP |
|
FQPF3P20Rochester Electronics |
MOSFET P-CH 200V 2.2A TO220F |
|
IRLR3636TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 50A DPAK |
|
AOB2904Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 120A TO263 |
|
BSZ050N03MSGRochester Electronics |
BSZ050N03 - 12V-300V N-CHANNEL P |
|
H5N2512FN-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN2011UFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 11.7A 6UDFN |
|
TK16N60W,S1VFToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 15.8A TO247 |
|
TSM4ND60CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 4A ITO220 |
|
PMN42XPE,115Rochester Electronics |
MOSFET P-CH 20V 4A 6TSOP |