English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 8™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 56A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 100mOhm @ 28A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 220 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 8800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 780W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264 [L] |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BF20-40E6814Rochester Electronics |
RF N-CHANNEL MOSFET |
|
FQA15N70Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTD4969N-1GRochester Electronics |
MOSFET N-CH 30V 9.4A/41A IPAK |
|
IRFR4105PBFRochester Electronics |
MOSFET N-CH 55V 27A DPAK |
|
SPD01N60C3BTMA1Rochester Electronics |
MOSFET N-CH 650V 800MA TO252-3 |
|
RQ6P015SPTRROHM Semiconductor |
MOSFET P-CH 100V 1.5A TSMT6 |
|
IXTA120N04T2Wickmann / Littelfuse |
MOSFET N-CH 40V 120A TO263 |
|
TK290A60Y,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 11.5A TO220SIS |
|
RFD8P06LERochester Electronics |
P-CHANNEL POWER MOSFET |
|
SQD40N06-25L-GE3Vishay / Siliconix |
MOSFET N-CH 60V 30A TO252 |
|
TK50P04M1(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 50A DP |
|
HUF75631S3STRochester Electronics |
MOSFET N-CH 100V 33A D2PAK |
|
2N7002WT1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
