English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DTMOSV |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 290mOhm @ 5.8A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 450µA |
| 栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 730 pF @ 300 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 35W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220SIS |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RFD8P06LERochester Electronics |
P-CHANNEL POWER MOSFET |
|
SQD40N06-25L-GE3Vishay / Siliconix |
MOSFET N-CH 60V 30A TO252 |
|
TK50P04M1(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 50A DP |
|
HUF75631S3STRochester Electronics |
MOSFET N-CH 100V 33A D2PAK |
|
2N7002WT1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IPP120N04S302AKSA1Rochester Electronics |
PFET, 120A I(D), 40V, 0.0023OHM, |
|
BSS127S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 600V 50MA SOT23 |
|
STF10N95K5STMicroelectronics |
MOSFET N-CH 950V 8A TO220FP |
|
ISZ0901NLSATMA1IR (Infineon Technologies) |
25V, N-CH MOSFET, LOGIC LEVEL, P |
|
SIHH11N65E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 12A PPAK 8 X 8 |
|
AO4485Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 10A 8SOIC |
|
TSM60NB600CF C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 8A ITO220S |
|
FQT4N25TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 830MA SOT223-4 |
