English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.3mOhm @ 80A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 230µA |
| 栅极电荷 (qg) (max) @ vgs: | 210 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 14.3 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3-1 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSS127S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 600V 50MA SOT23 |
|
STF10N95K5STMicroelectronics |
MOSFET N-CH 950V 8A TO220FP |
|
ISZ0901NLSATMA1IR (Infineon Technologies) |
25V, N-CH MOSFET, LOGIC LEVEL, P |
|
SIHH11N65E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 12A PPAK 8 X 8 |
|
AO4485Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 10A 8SOIC |
|
TSM60NB600CF C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 8A ITO220S |
|
FQT4N25TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 830MA SOT223-4 |
|
IRF540NSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 33A D2PAK |
|
IRLHM630TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 21A/40A PQFN |
|
IXTP70N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 70A TO220AB |
|
SI4465ADY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 8SOIC |
|
NTMFS6H800NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 28A/203A 5DFN |
|
SI4410DYPBFRochester Electronics |
MOSFET N-CH 30V 10A 8SO |
