类型 | 描述 |
---|---|
系列: | POWER MOS 7® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 1200 V |
电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.4Ohm @ 4.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 120 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2500 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 300W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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MSC080SMA120BRoving Networks / Microchip Technology |
SICFET N-CH 1200V 37A TO247-3 |
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MOSFET N-CH 60V 38A/250A 5DFN |
|
SI2307CDS-T1-BE3Vishay / Siliconix |
MOSFET P-CH 30V 2.7A/3.5A SOT23 |
|
FDD6670ASRochester Electronics |
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|
DN2450K4-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 350MA TO252 |
|
NTD18N06LGRochester Electronics |
MOSFET N-CH 60V 18A DPAK |
|
IXTY18P10TWickmann / Littelfuse |
MOSFET P-CH 100V 18A TO252 |
|
DMP210DUFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 200MA 3DFN |
|
FQPF11N50CFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 11A TO220F |
|
IXTA6N50D2Wickmann / Littelfuse |
MOSFET N-CH 500V 6A TO263 |
|
IPS60R400CEAKMA1IR (Infineon Technologies) |
CONSUMER |