类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 200mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.2V, 4.5V |
rds on (max) @ id, vgs: | 5Ohm @ 100mA, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 175 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 350mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | X2-DFN1006-3 |
包/箱: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQPF11N50CFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 11A TO220F |
|
IXTA6N50D2Wickmann / Littelfuse |
MOSFET N-CH 500V 6A TO263 |
|
IPS60R400CEAKMA1IR (Infineon Technologies) |
CONSUMER |
|
UF3C170400K3SUnitedSiC |
SICFET N-CH 1700V 7.6A TO247-3 |
|
PMPB10XNEZRochester Electronics |
PMPB10XNE - 20 V, SINGLE N-CHANN |
|
SIR876ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 40A PPAK SO-8 |
|
BSS123WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 170MA SC70 |
|
CSD18510Q5BTexas Instruments |
MOSFET N-CH 40V 300A 8VSON |
|
AOB4184Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 12A/50A TO263 |
|
IPB100N06S205ATMA4IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO263-3 |
|
SCH1331-S-TL-HRochester Electronics |
MOSFET P-CH 12V 3A SCH6 |
|
NTD50N03R-35GRochester Electronics |
MOSFET N-CH 25V 7.8A/45A IPAK |
|
IXFN64N50PWickmann / Littelfuse |
MOSFET N-CH 500V 61A SOT227B |