N-CHANNEL POWER MOSFET
RFID READER R/W 13.56MHZ 1.9M CB
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RM78N100LDRectron USA |
MOSFET N-CH 100V 78A TO252-2 |
|
IRFB7434PBFRochester Electronics |
IRFB7434 - 12V-300V N-CHANNEL PO |
|
FQP5N80Rochester Electronics |
MOSFET N-CH 800V 4.8A TO220-3 |
|
SSM3J130TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4.4A UFM |
|
SI1012X-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 500MA SC89-3 |
|
IRLM120ATFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 2.3A SOT223-4 |
|
APT20M22LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A TO264 |
|
SPA07N60CFDXKSA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
IPDH6N03LAGRochester Electronics |
PFET, 50A I(D), 25V, 0.006OHM, 1 |
|
SQ4401EY-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 17.3A 8SO |
|
APT51F50JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 51A ISOTOP |
|
DMP510DL-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 50V 180MA SOT23 |
|
CSD16327Q3TTexas Instruments |
MOSFET N-CH 25V 60A 8VSON |