类型 | 描述 |
---|---|
系列: | CoolMOS™ |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 6.6A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 700mOhm @ 4.6A, 10V |
vgs(th) (最大值) @ id: | 5V @ 300µA |
栅极电荷 (qg) (max) @ vgs: | 47 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 790 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 32W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220-FP |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPDH6N03LAGRochester Electronics |
PFET, 50A I(D), 25V, 0.006OHM, 1 |
|
SQ4401EY-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 17.3A 8SO |
|
APT51F50JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 51A ISOTOP |
|
DMP510DL-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 50V 180MA SOT23 |
|
CSD16327Q3TTexas Instruments |
MOSFET N-CH 25V 60A 8VSON |
|
IXFR20N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 13A ISOPLUS247 |
|
DMN6066SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3.7A 8SO |
|
STP27N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 20A TO220 |
|
STW43N60DM2STMicroelectronics |
MOSFET N-CH 600V 34A TO247 |
|
SI7113ADN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 100V 10.8A PPAK |
|
IRLMS1902TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 3.2A MICRO6 |
|
STH400N4F6-2STMicroelectronics |
MOSFET N-CH 40V 180A H2PAK-2 |
|
STP310N10F7STMicroelectronics |
MOSFET N CH 100V 180A TO-220 |