MOSFET P-CH 12V 3.2A DFN1010D-3
SLIM REACH XTEND 2.4 GHZ
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 3.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.2V, 4.5V |
rds on (max) @ id, vgs: | 72mOhm @ 3.2A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 12 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 634 pF @ 6 V |
场效应管特征: | - |
功耗(最大值): | 317mW (Ta), 8.33W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DFN1010D-3 |
包/箱: | 3-XDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TK13A45D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 13A TO220SIS |
|
RFD12N06RLESM9ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A TO252AA |
|
IPD90N03S4L03ATMA1Rochester Electronics |
IPD90N03 - 20V-40V N-CHANNEL AUT |
|
MCH6336-TL-WRochester Electronics |
MOSFET P-CH 12V 5A SC88FL/MCPH6 |
|
BUK7227-100B,118Nexperia |
MOSFET N-CH 100V 48A DPAK |
|
IRFR014TRLPBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
AOWF12T60PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 12A TO262F |
|
FDP070AN06A0Rochester Electronics |
MOSFET N-CH 60V 15A/80A TO220-3 |
|
BSC252N10NSFGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 7.2A/40A TDSON |
|
IPA60R125CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 11A TO220 |
|
NTB12N50T4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD60R600E6ATMA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
FQP9N25Rochester Electronics |
N-CHANNEL POWER MOSFET |