类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 25 V |
电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 2.4mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 1.95V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 39 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2542 pF @ 12 V |
场效应管特征: | - |
功耗(最大值): | 106W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | LFPAK56, Power-SO8 |
包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFR120TRPBFVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
SIHG35N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 32A TO247AC |
|
BSZ010NE2LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 32A/40A TSDSON |
|
SI3424CDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 8A 6TSOP |
|
FDU8586Rochester Electronics |
MOSFET N-CH 20V 35A IPAK |
|
HUFA76619D3STRochester Electronics |
MOSFET N-CH 100V 18A TO252AA |
|
AOD2544Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 6.5A/23A TO252 |
|
APT17F120JRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 18A ISOTOP |
|
DMT6009LCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 37.2A TO220AB |
|
FQU2N50BTU-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 1.6A IPAK |
|
IXTA80N10TWickmann / Littelfuse |
MOSFET N-CH 100V 80A TO263 |
|
IPD088N06N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A TO252-3 |
|
STFI20NM65NSTMicroelectronics |
MOSFET N-CH 650V 15A I2PAKFP |