类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 4.3A (Ta), 5.2A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 42mOhm @ 3.8A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 15 nC @ 8 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 560 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1.25W (Ta), 1.8W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 (TO-236) |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EKI04036Sanken Electric Co., Ltd. |
MOSFET N-CH 40V 80A TO220-3 |
|
SIRA96DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A PPAK SO-8 |
|
DMTH4004SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A TO252 |
|
SIHA30N60AEL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 28A TO220 |
|
SPD02N50C3BTMA1Rochester Electronics |
MOSFET N-CH 500V 1.8A TO252 |
|
BUK7E4R0-80E,127Rochester Electronics |
MOSFET N-CH 80V 120A I2PAK |
|
FDMS86101DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 14.5A DLCOOL56 |
|
RLP03N06CLERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQJA84EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 46A PPAK SO-8 |
|
TK11A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 11.1A TO220SIS |
|
IPD90N10S406ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 90A TO252-3 |
|
MGSF3455XT1Rochester Electronics |
P-CHANNEL MOSFET |
|
MMFTP84Diotec Semiconductor |
MOSFET P-CH 60V 130MA SOT23-3 |