类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 800 V |
电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 900mOhm @ 4A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1320 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 98W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-263-2 |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PH6530AL115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
IRFR6215TRRPBF-IRRochester Electronics |
MOSFET P-CH 150V 13A DPAK |
|
IRFR3607TRPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 56A DPAK |
|
IRF7404PBFRochester Electronics |
MOSFET P-CH 20V 6.7A 8SO |
|
BSZ017NE2LS5IATMA1Rochester Electronics |
MOSFET N-CH 25V 27A/40A TSDSON |
|
MTB3N60ET4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NP82N04NDG-S18-AYRochester Electronics |
MOSFET N-CH 40V 82A 3LDPAK |
|
IXFK24N80PWickmann / Littelfuse |
MOSFET N-CH 800V 24A TO264AA |
|
BUK753R1-40E,127Nexperia |
MOSFET N-CH 40V 100A TO220AB |
|
TSM60NB190CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 18A TO220 |
|
DMT4008LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V PWRDI3333 |
|
PMZ390UNE/S500315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
DMN6069SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 5.6A POWERDI333 |