English
简体中文
MOSFET N-CH 150V 1.2A 6TSOP
PURE-TAKE YLW DURASTATIC SQ 6 OZ
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 375mOhm @ 1.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.14W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-TSOP |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK10A60D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 10A TO220SIS |
|
FQP5P20Rochester Electronics |
MOSFET P-CH 200V 4.8A TO220-3 |
|
BUK78150-55A/CUFNexperia |
MOSFET N-CH 55V 5.5A SOT223 |
|
CSD17555Q5ARochester Electronics |
OXIDE SEMICONDUCTOR FET |
|
BUK9225-55A,118Nexperia |
MOSFET N-CH 55V 43A DPAK |
|
SI7611DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 18A PPAK1212-8 |
|
IXTA08N100D2HVWickmann / Littelfuse |
MOSFET N-CH 1000V 800MA TO263HV |
|
AOSP66923Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 12A 8SOIC |
|
EPC2031EPC |
GANFET NCH 60V 31A DIE |
|
SQ2348ES-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 8A TO236 |
|
HRF3205_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFR2307ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 42A DPAK |
|
IXFN48N60PWickmann / Littelfuse |
MOSFET N-CH 600V 40A SOT227B |