English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.5Ohm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 140 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 36W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFS4310TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 130A D2PAK |
|
NX138BKRNexperia |
MOSFET N-CH 60V 265MA TO236AB |
|
DMNH6042SPDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET NCH 60V 5.7A POWERDI |
|
IPA045N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 64A TO220-FP |
|
AOWF25S65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 25A TO262F |
|
STP100N8F6STMicroelectronics |
MOSFET N-CH 80V 100A TO220 |
|
IRLML6344TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 5A MICRO3/SOT23 |
|
IPAW60R360P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO220 |
|
FDS6676Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
TK6A45DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 5.5A TO220SIS |
|
IPI110N20N3GAKSA1Rochester Electronics |
MOSFET N-CH 200V 88A TO262-3 |
|
SSM3K2615R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 2A SOT23F |
|
IXFX21N100QWickmann / Littelfuse |
MOSFET N-CH 1000V 21A PLUS247-3 |
