English
简体中文
RES 19.6K OHM 1/2W 0.1% AXIAL
SFERNICE FIXED RESISTORS
MOSFET N-CH 650V 13A TO247-3
FIXED IND 150UH 800MA 470 MOHM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ C7 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 190mOhm @ 5.7A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 290µA |
| 栅极电荷 (qg) (max) @ vgs: | 23 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1150 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 72W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7675-100A,118Rochester Electronics |
PFET, 23A I(D), 100V, 0.075OHM, |
|
FDPF7N60NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.5A TO220F |
|
FCH170N60Rochester Electronics |
MOSFET N-CH 600V 22A TO247-3 |
|
BUK9Y6R0-60E,115Nexperia |
MOSFET N-CH 60V 100A LFPAK56 |
|
NTR4170NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V SOT23-3 |
|
HUF75321D3Rochester Electronics |
MOSFET N-CH 55V 20A IPAK |
|
STP8N80K5STMicroelectronics |
MOSFET N CH 800V 6A TO220 |
|
DMTH6009LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 14.2A/59A TO252 |
|
IRFR3411PBFRochester Electronics |
MOSFET N-CH 100V 32A DPAK |
|
IXTH1N170DHVWickmann / Littelfuse |
MOSFET N-CH 1700V 1A TO247HV |
|
APT8024LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 31A TO264 |
|
IRF710SPBFVishay / Siliconix |
MOSFET N-CH 400V 2A D2PAK |
|
2SK1461Rochester Electronics |
N-CHANNEL POWER MOSFET |