English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 350mOhm @ 5.5A, 8V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 9.3 nC @ 4.5 V |
| vgs (最大值): | ±18V |
| 输入电容 (ciss) (max) @ vds: | 760 pF @ 480 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 65W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 4-PQFN (8x8) |
| 包/箱: | 4-PowerDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTP90N15TWickmann / Littelfuse |
MOSFET N-CH 150V 90A TO220AB |
|
IPU80R4K5P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 1.5A TO251-3 |
|
NVMFS5C612NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 38A/250A 5DFN |
|
IRFSL7534PBFRochester Electronics |
MOSFET N-CH 60V 195A TO262 |
|
SI7738DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 30A PPAK SO-8 |
|
FDD6670ALRochester Electronics |
MOSFET N-CH 30V 84A DPAK |
|
IRFR9024NTRPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 11A DPAK |
|
SQJA96EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
|
PSMN041-80YLXNexperia |
MOSFET N-CH 80V 25A LFPAK56 |
|
ECH8310-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 9A 8ECH |
|
NTD4858N-35GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 11.2A/73A IPAK |
|
SQ2319ADS-T1_BE3Vishay / Siliconix |
MOSFET P-CH 40V 4.6A SOT23-3 |
|
IRFP9140NPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 23A TO247AC |
