类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 4.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 36mOhm @ 4.5A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 6.3 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 209 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 510mW (Ta), 5W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-236AB |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PSMN034-100PS,127Nexperia |
MOSFET N-CH 100V 32A TO220AB |
|
FCPF190N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20.2A TO220F |
|
STB30NF20STMicroelectronics |
MOSFET N-CH 200V 30A D2PAK |
|
IRFH7084TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8PQFN |
|
TK8A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 8A TO220SIS |
|
IPN70R1K2P7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4.5A SOT223 |
|
CSD18541F5TTexas Instruments |
MOSFET N-CH 60V 2.2A 3PICOSTAR |
|
SQ2398ES-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 1.6A SOT23-3 |
|
DMPH6050SFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V PWRDI3333 |
|
PMV27UPERNexperia |
MOSFET P-CH 20V 4.5A TO236AB |
|
DMP3026SFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 10.4A 6UDFN |
|
DMNH6008SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 16.5A PWRDI5060 |
|
NTMS4705NR2GRochester Electronics |
MOSFET N-CH 30V 7.4A 8SOIC |