English
简体中文
MOSFET N-CH 75V 10A/100A TO220
RSP20-11003Z6TT-SK9V9HSE2SXX.X.X
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Ta), 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 10.5mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 136 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 5640 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.1W (Ta), 268W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ATP404-H-TL-HRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
NTE454NTE Electronics, Inc. |
MOSFET-DUAL GATE N-CH |
|
UPA1809GR-9JG-E2-ARochester Electronics |
MOSFET N-CH 30V 8A 8TSSOP |
|
NVD5806NT4GRochester Electronics |
40V, 33A, SINGLE N-CHANNEL |
|
BUK9840-55/CUXRochester Electronics |
MOSFET N-CH 55V 5A/10.7A SOT223 |
|
STB100NF04T4STMicroelectronics |
MOSFET N-CH 40V 120A D2PAK |
|
IXFA220N06T3Wickmann / Littelfuse |
MOSFET N-CH 60V 220A TO263 |
|
IPW60R099C6FKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 37.9A TO247-3 |
|
IXTK140N20PWickmann / Littelfuse |
MOSFET N-CH 200V 140A TO264 |
|
STL8P2UH7STMicroelectronics |
MOSFET P-CH 20V 8A POWERFLAT |
|
FQPF19N20Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IPA70R450P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 10A TO220 |
|
NXV40UNRNexperia |
NXV40UN/SOT23/TO-236AB |