EMITTER IR 860NM 100MA PLCC
MOSFET N-CH 60V 300MA SOT23
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 300mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 1.6Ohm @ 100mA, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 720 pC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 30 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 400mW (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB65R225C7ATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO263-3 |
|
IRF2204PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 210A TO220AB |
|
R6030ENZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 30A TO247 |
|
IPS075N03LGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMV30UN2RNexperia |
MOSFET N-CH 20V 4.2A TO236AB |
|
HUFA75307D3STRochester Electronics |
MOSFET N-CH 55V 15A TO252AA |
|
PSMN1R8-30PL,127Nexperia |
MOSFET N-CH 30V 100A TO220AB |
|
SSM3J15CT(TPL3)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 100MA CST3 |
|
SI7309DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 8A PPAK1212-8 |
|
IXTY02N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 200MA TO252 |
|
IPU50R3K0CEBKMA1Rochester Electronics |
MOSFET N-CH 500V 1.7A TO251-3 |
|
VN0550N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 50MA TO92-3 |
|
MMDFS2P102R2Rochester Electronics |
P-CHANNEL POWER MOSFET |