类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 13A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 9mOhm @ 13A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 3939 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOIC |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STD60NF55LAT4STMicroelectronics |
MOSFET N-CH 55V 60A DPAK |
|
HUF75307D3STRochester Electronics |
MOSFET N-CH 55V 15A TO252 |
|
R6020JNXC7GROHM Semiconductor |
MOSFET N-CH 600V 20A TO220FM |
|
SI2304DS,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
FDD16AN08A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 9A/50A DPAK |
|
FCD2250N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 2.6A DPAK |
|
IXFQ94N30P3Wickmann / Littelfuse |
MOSFET N-CH 300V 94A TO3P |
|
DMNH3010LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 15A/55A TO252-4L |
|
FCP165N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 19A TO220-3 |
|
NDD05N50Z-1GRochester Electronics |
MOSFET N-CH 500V 4.7A IPAK |
|
STL2N80K5STMicroelectronics |
MOSFET N-CH 800V 2A POWERFLAT |
|
AUIRFSA8409-7PIR (Infineon Technologies) |
MOSFET N-CH 40V 523A D2PAK |
|
IXTR140P10TWickmann / Littelfuse |
MOSFET P-CH 100V 110A ISOPLUS247 |