English
简体中文
MOSFET N-CH 600V 30.8A TO247
RIGHT ANGLE RACEWAY ACCESSORY 1
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DTMOSIV |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30.8A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 99mOhm @ 15.4A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 1.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 105 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3000 pF @ 300 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 230W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRFR2607ZTRLRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
NVD5C454NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 19A/82A DPAK |
|
MTB50P03HDLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 50A D2PAK |
|
SIHG61N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 64A TO247AC |
|
FDD5N50NZFTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 3.7A DPAK |
|
NTHD2110TT1GRochester Electronics |
MOSFET P-CH 12V 4.5A CHIPFET |
|
APT8020JLLRoving Networks / Microchip Technology |
MOSFET N-CH 800V 33A ISOTOP |
|
ISL9N322AS3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
6HP04MH-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 370MA SC70FL |
|
RSD140P06TLROHM Semiconductor |
MOSFET P-CH 60V 14A CPT3 |
|
FQPF6N80TRochester Electronics |
MOSFET N-CH 800V 3.3A TO220F |
|
DMN10H120SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 3.8A PWRDI3333 |
|
SCT3022KLGC11ROHM Semiconductor |
SICFET N-CH 1200V 95A TO247N |