类型 | 描述 |
---|---|
系列: | CoolMOS™ CFD7 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 105mOhm @ 9.3A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 470µA |
栅极电荷 (qg) (max) @ vgs: | 42 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1752 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 106W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TO263-3-2 |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQP11N50CFRochester Electronics |
MOSFET N-CH 500V 11A TO220-3 |
|
DMN2230UQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2A SOT23 |
|
NTMFS4898NFT1GRochester Electronics |
MOSFET N-CH 30V 13.2A/117A 5DFN |
|
STB35N65M5STMicroelectronics |
MOSFET N-CH 650V 27A D2PAK |
|
BSP129H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 350MA SOT223-4 |
|
IRF9530PBFVishay / Siliconix |
MOSFET P-CH 100V 12A TO220AB |
|
PSMN0R9-25YLDXNexperia |
MOSFET N-CH 25V 300A LFPAK56 |
|
SI4166DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 30.5A 8SO |
|
FDG311NRochester Electronics |
MOSFET N-CH 20V 1.9A SC88 |
|
STP3NK50ZSTMicroelectronics |
MOSFET N-CH 500V 2.3A TO220AB |
|
IRF1405ZPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO220AB |
|
DMP3017SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 11.5A PWRDI3333 |
|
RM40N40LDRectron USA |
MOSFET N-CHANNEL 40V 42A TO252-2 |