类型 | 描述 |
---|---|
系列: | UltraFET™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 10mOhm @ 75A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 235 nC @ 20 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3.75 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 270W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STP10NK70ZSTMicroelectronics |
MOSFET N-CH 700V 8.6A TO220AB |
|
FDU6682Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPSA70R900P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6A TO251-3 |
|
DMP4015SSSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 9.1A 8SO |
|
SISS26LDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 23.7A/81.2A PPAK |
|
APT22F80SRoving Networks / Microchip Technology |
MOSFET N-CH 800V 23A D3PAK |
|
PSMN028-100YS,115Nexperia |
MOSFET N-CH 100V 42A LFPAK56 |
|
IPB016N06L3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 180A TO263-7 |
|
BUK7Y29-40EXRochester Electronics |
MOSFET N-CH 40V 26A LFPAK56 |
|
IRL3103PBFRochester Electronics |
HEXFET POWER MOSFET |
|
TP5322K1-GRoving Networks / Microchip Technology |
MOSFET P-CH 220V 120MA TO236AB |
|
RHU002N06T106ROHM Semiconductor |
MOSFET N-CH 60V 200MA UMT3 |
|
IRF4905STRLPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 42A D2PAK |