English
简体中文
MOSFET N-CH 40V 26A LFPAK56
OPTOISO 4.17KV TRANS 6DIP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 26A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 29mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 7.9 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 492 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 37W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK56, Power-SO8 |
| 包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRL3103PBFRochester Electronics |
HEXFET POWER MOSFET |
|
TP5322K1-GRoving Networks / Microchip Technology |
MOSFET P-CH 220V 120MA TO236AB |
|
RHU002N06T106ROHM Semiconductor |
MOSFET N-CH 60V 200MA UMT3 |
|
IRF4905STRLPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 42A D2PAK |
|
RM2305BRectron USA |
MOSFET P-CH 20V 3A/4.1A SOT23 |
|
NVD6415ANLT4GRochester Electronics |
23A, 100V, 0.056OHM, N-CHANNEL, |
|
STU3N45K3STMicroelectronics |
MOSFET N-CH 450V 1.8A IPAK |
|
FDB0300N1007LRochester Electronics |
MOSFET N-CH 100V 200A TO263-7 |
|
BUK9520-55A,127Rochester Electronics |
MOSFET N-CH 55V 54A TO220AB |
|
BUK9Y7R2-60E,115Nexperia |
MOSFET N-CH 60V 100A LFPAK56 |
|
IXFH150N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 150A TO247 |
|
NVMFS4C01NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 49A/319A 5DFN |
|
SIHB21N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO263AB |