English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSC0403NSATMA1IR (Infineon Technologies) |
150V, N-CH MOSFET, LOGIC LEVEL, |
|
PMV15UNEARNexperia |
MOSFET N-CH 20V 7A TO236AB |
|
SI7112DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 11.3A PPAK1212-8 |
|
SIHP14N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 14A TO220AB |
|
TK3R1A04PL,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 82A TO220SIS |
|
AOTS21311CAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 5.9A 6TSOP |
|
STF12N60M2STMicroelectronics |
MOSFET N-CH 600V 9A TO220FP |
|
IAUC60N04S6N044ATMA1IR (Infineon Technologies) |
IAUC60N04S6N044ATMA1 |
|
BSS606NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 3.2A SOT89 |
|
PMN48XP,125Rochester Electronics |
MOSFET P-CH 20V 4.1A 6TSOP |
|
SIHA11N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 12A TO220 |
|
NTJS3157NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.2A SC88/SC70-6 |
|
PMN120ENEXNexperia |
MOSFET N-CH 60V 3.1A 6TSOP |
