English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | E |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 440mOhm @ 5.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 88 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1670 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 34W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 Full Pack |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTJS3157NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.2A SC88/SC70-6 |
|
PMN120ENEXNexperia |
MOSFET N-CH 60V 3.1A 6TSOP |
|
IPB083N15N5LFATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 105A D2PAK |
|
APT60M75JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 58A ISOTOP |
|
IXTQ460P2Wickmann / Littelfuse |
MOSFET N-CH 500V 24A TO3P |
|
IXTQ96N15PWickmann / Littelfuse |
MOSFET N-CH 150V 96A TO3P |
|
STF35N60DM2STMicroelectronics |
MOSFET N-CH 600V 28A TO220FP |
|
IPD30N06S4L23ATMA1Rochester Electronics |
MOSFET N-CH 60V 30A TO252-3 |
|
IPB120N08S403ATMA1Rochester Electronics |
MOSFET N-CH 80V 120A TO263-3-2 |
|
IPW65R150CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 22.4A TO247-3 |
|
SIHB100N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 30A D2PAK |
|
DMT6007LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 15A PWRDI3333 |
|
SIHFS11N50A-GE3Vishay / Siliconix |
MOSFET N-CH 500V 11A TO263 |
