类型 | 描述 |
---|---|
系列: | U-MOSVI-H |
包裹: | Tape & Reel (TR) |
零件状态: | Last Time Buy |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 60A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 6.4mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 2.3V @ 500µA |
栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2700 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 63W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TSM4NB60CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 4A TO251 |
|
SPP02N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AO7407Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 1.2A SC70-3 |
|
APT8056BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 16A TO247 |
|
FQD4P25TM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 250V 3.1A DPAK |
|
ZXMP10A17KTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 2.4A TO252-2 |
|
STP4N52K3STMicroelectronics |
MOSFET N-CH 525V 2.5A TO220 |
|
SQ2303ES-T1_BE3Vishay / Siliconix |
MOSFET P-CH 30V 2.5A SOT23-3 |
|
DMP2033UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.2A TSOT-26 |
|
SIA433EDJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 12A PPAK SC70-6 |
|
SI2307CDS-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 3.5A SOT23-3 |
|
TP5322N8-GRoving Networks / Microchip Technology |
MOSFET P-CH 220V 260MA TO243AA |
|
DMP3056L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 4.3A SOT23 |