类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK9628-100A,118Nexperia |
MOSFET N-CH 100V 49A D2PAK |
|
NTD3055L170T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9A DPAK |
|
AUIRLL024NTR-IRRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
IPB120N06S402ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO263-3 |
|
RW1C020UNT2RROHM Semiconductor |
MOSFET N-CH 20V 2A 6WEMT |
|
IRFR210TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
|
FQP19N20LRochester Electronics |
MOSFET N-CH 200V 21A TO220-3 |
|
TSM70N900CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 4.5A ITO220AB |
|
IRFR9120Rochester Electronics |
MOSFET P-CH 100V 5.6A DPAK |
|
SI7172DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 25A PPAK SO-8 |
|
FDH210N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V TO247-3 |
|
STL42P4LLF6STMicroelectronics |
MOSFET P-CH 40V 42A POWERFLAT |
|
FQI5N60CTURochester Electronics |
MOSFET N-CH 600V 4.5A I2PAK |