







 
                            P-CHANNEL MOSFET
 
                            DIODE GEN PURP 100V 1A SUB SMA
 
                            CONN HEADER VERT 20POS 2.54MM
 
                            IC REG LINEAR 1.5V 350MA 6WDFN
| 类型 | 描述 | 
|---|---|
| 系列: | * | 
| 包裹: | Bulk | 
| 零件状态: | Active | 
| 场效应管类型: | - | 
| 技术: | - | 
| 漏源电压 (vdss): | - | 
| 电流 - 连续漏极 (id) @ 25°c: | - | 
| 驱动电压(最大 rds on,最小 rds on): | - | 
| rds on (max) @ id, vgs: | - | 
| vgs(th) (最大值) @ id: | - | 
| 栅极电荷 (qg) (max) @ vgs: | - | 
| vgs (最大值): | - | 
| 输入电容 (ciss) (max) @ vds: | - | 
| 场效应管特征: | - | 
| 功耗(最大值): | - | 
| 工作温度: | - | 
| 安装类型: | - | 
| 供应商设备包: | - | 
| 包/箱: | - | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | BUK9628-100A,118Nexperia | MOSFET N-CH 100V 49A D2PAK | 
|   | NTD3055L170T4GSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 60V 9A DPAK | 
|   | AUIRLL024NTR-IRRochester Electronics | AUTOMOTIVE POWER MOSFET | 
|   | IPB120N06S402ATMA2IR (Infineon Technologies) | MOSFET N-CH 60V 120A TO263-3 | 
|   | RW1C020UNT2RROHM Semiconductor | MOSFET N-CH 20V 2A 6WEMT | 
|   | IRFR210TRPBF-BE3Vishay / Siliconix | MOSFET N-CH 200V 2.6A DPAK | 
|   | FQP19N20LRochester Electronics | MOSFET N-CH 200V 21A TO220-3 | 
|   | TSM70N900CI C0GTSC (Taiwan Semiconductor) | MOSFET N-CH 700V 4.5A ITO220AB | 
|   | IRFR9120Rochester Electronics | MOSFET P-CH 100V 5.6A DPAK | 
|   | SI7172DP-T1-GE3Vishay / Siliconix | MOSFET N-CH 200V 25A PPAK SO-8 | 
|   | FDH210N08Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 75V TO247-3 | 
|   | STL42P4LLF6STMicroelectronics | MOSFET P-CH 40V 42A POWERFLAT | 
|   | FQI5N60CTURochester Electronics | MOSFET N-CH 600V 4.5A I2PAK |